Generation of spin currents via Raman scattering.
نویسندگان
چکیده
We show theoretically that stimulated spin-flip Raman scattering can be used to inject spin currents in doped semiconductors with spin-split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zinc blende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.
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ورودعنوان ژورنال:
- Physical review letters
دوره 95 5 شماره
صفحات -
تاریخ انتشار 2005